As a fundamental building block of large area electronics, thin-film transistor (TFT) technology has enjoyed an exciting era of research and development in the past decades. Its dominant application-flat panel active matrix display has grown to be a multi-billion-dollar business that keeps growing. In addition to TFTs in amorphous- and polycrystalline-silicon, newly emerging organic, metal oxide and nano-composite semiconductor TFT technologies are becoming increasingly popular. Solution/printing based TFT technologies are also attracting great attention from both academia and industry.

These new technologies are needed to meet the growing demands for displays of better quality, lower cost and greener manufacturing, and being thin and flexible. Moreover, the applications of TFTs have been extended from the pixel switching to more complex electronic functions for sensing, imaging, signal communication, processing and data storage on glass, plastic or fabrics substrates, which will enable a lowcost and flexible design solution to usher the age of pervasive electronics, IOTs and artificial intelligence. Therefore, development of computer-aided design (CAD) techniques at all levels becomes more and more critical for the TFT community to bridge the gap between new material/device technologies and implementation of functional systems.

IEEE CAD-TFT is the conference dedicated to CAD techniques on TFT technologies for displays, sensors and general large area, flexible and printed electronics. CAD-TFT 2018 follows 2017 CAD-TFT workshop in Cambridge, CAD-TFT 2016 in Beijing, CAD-TFT 2014 in Nanjing, and the previous meetings (International Workshop on Compact Thin-Film Transistor Modeling for Circuit Simulation) held in Cambridge, London, Tarragona, Cambridge and Grenoble. The conference will provide a forum for the TFT community to discuss and address the challenges and seek innovative solutions for modelling of new technology TFTs, TFT device and circuit design and system integration. The areas of interests include, but are not limited to:

●žProcesses and physics of new technology TFTs (metal oxide, organic, nanomaterials, and etc)
●žSimulation and characterization techniques for TFTs
ž●Characterization and modeling the impact of processes on the device performance
ž●Compact TFT device models for circuit simulation
ž●Model implementation and parameter extraction techniques
ž●Compact models for interconnects in active matrix flat panels
ž●TFT circuit design and analysis techniques
ž●TFT Design for displays and emerging applications

Prospective authors should submit a one-page manuscript to cadtft2018@chinatft.org using the given template. Authors of accepted papers will have the opportunity to revise their submissions according to reviewers' comments and submit final versions to be published in the Proceedings and on IEEE Xplore.

General Chair: Shengdong Zhang, Peking University Shenzhen Graduate School, China
Co-chair: Bingde Liu, Shenzhen China Star Optoelectronics Technology Co., Ltd., China
Co-chair: Xiaowei Sun, South University of Science and Technology, China

Chair: Kai Wang, Sun Yat-Sen University, China
Co-chair: Ling Li, Institute of Microelectronics, CAS, China
Byongdeok Choi, Hanyang University, Korea
Ta-Ya Chu, National Research Council, Canada
Xiaojun Guo, Shanghai Jiao Tong University, China 
Yongpan Liu, Tsinghua University, China
Lei Liao, Hunan University, China
Linfeng Lan, South China University of Technology, China
Chuan Liu, Sun Yat-sen University, China
Xifeng Li, Shanghai University, China
Tse Nga (Tina) Ng, University of California, San Diego, USA
Ahmed Nejim, Silvaco Inc., Cambridge, UK
Dongming Sun, Institute of Metal Research, Chinese Academy of Sciences, China
Radu Sporea, University of Surrey, UK
Makoto Watanabe, Japan Display Inc., Japan
Man Wong, Hong Kong University of Science and Technology, Hong Kong, China
Qun Zhang, Fudan University, China

Yvan Bonnassieux, Ecole Polytechnique, France
Jamal Deen, McMaster University, Canada
Xiaojun Guo, Shanghai Jiao Tong University, China
Benjamin Iniguez, Universitat Rovirai Virgili, Spain
Arokia Nathan, University of Cambridge, UK
Samar Saha, IEEE EDS, Former President, USA
Ravi Todi, IEEE EDS VP of Technical Committees & Meetings, Global Foundries Inc., USA

Yvan Bonnassieux, Ecole Polytechnique, France
Jamal Deen, McMaster University, Canada
Benjamin Iniguez, Universitat Rovirai Virgili, Spain
Jin Jang, Kyung Hee University, Korea
Ming Liu, Institute of Microelectronics, CAS, China
Yunqi Liu, Institute of Chemistry, CAS, China
Arokia Nathan, University of Cambridge, UK
K.-T. Tim Cheng, Hong Kong Univ. of Science and Technology, China

Chair: Hang Zhou, Peking University Shenzhen Graduate School, China
Co-chair: Xugang Guo, South University of Science and Technology, China
Publication Chair: Radu Sporea, University of Surrey, UK
Treasurer: Min Zhang, Peking University Shenzhen Graduate School, China
Sponsorship Chair: Hailong Jiao, Peking University Shenzhen Graduate School, China
Secretory: Jianhua Yan, Peking University Shenzhen Graduate School, China
Publicity Chair: Shuming Chen, South University of Science and Technology, China

Chair: Byongdeok Choi Hanyang University, Korea
Co-chair: Di Geng Institute of Microelectronics, CAS, China
Co-chair: Congwei Liao, Peking University Shenzhen Graduate School, China

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