高能注入机
设备主要用于逻辑和存储器件、成像器件、功率器件的注入工艺。设备不仅具有稳定性强、注入参数控制精度高、注入均匀性与重复性好的优点,而且公益覆盖范围十分广泛。
The high energy solutions are used for the ion implantation of logic, storage device, image and power device. They can cover a wide range of process with accurate implant parameters, well uniformity and repeatability.
主要技术指标 | |
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离子能量
Energy
|
200 keV-3 MeV |
离子源寿命
Source Lifetime
|
≧200 小时 |
束流强度
Beam Current
|
B+,1MeV,≧1000 uA |
剂量注入范围
Dose Range
|
1E11-5E15ion/cm² |
均匀性与重复性
Uniformity and Repeatability
|
剂量:1E11-5E11ion/cm²,1σ≦1%;剂量:5E11-5E15ion/cm²,1σ≦0.5%; |
特点:
单圆片注入、高性能、长寿命离子源、能量范围大、能量纯度高、束流能量高、单电荷离子>1 MeV、束流传输效率高、注入流强大。
Single wafer implantation, well performance and long lifetime ion source, wide range of dose, high energy purity, high beam energy, E>1 MeV for single charge, high transmission efficiency, high beam current.
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